Infineon Technologies AG

Description

Datasheet Nov 10, 2014 Industrial Power Control. Data Sheet. Rev. 2.0, 2014-11-10. 1EDI20N12AF . Single Channel MOSFET and GaN HEMT Gate Driver IC. 1EDI60N12AF and 1EDI20N12AF for MOSFETs supply six and two amperes of output current. They have a separate output for charging and discharging the The 1EDI20N12AF and 1EDI60N12AF are intended to drive MOSFETs, SiC, and. GaN switches. The output current to drive the gate is set at a minimum of 2 A or 3. Material Content Data Sheet. Sales Product Name. 1EDI20N12AF . Issued. 31. October 2014. MA#. MA001245990. Package. PG-DSO-8-51. Weight*. Oct 23, 2014 Out/Clamp. 300. 11.1/12.1 IGBT. 1EDI20N12AF . 2.0/2.0. 3.5/3.0. Source/Sink. 105. 8.6/9.4 MOS. 1EDI60N12AF. 6.0/6.0. 11/9.0. Source/Sink.