Infineon Technologies AG

Description

Mar 13, 2006 Ordering Code. Marking. IPB80N06S2-09. PG-TO263-3-2. SP0002-18741. 2N0609 . IPP80N06S2-09. PG-TO220-3-1. SP0002-18740. 2N0609 . DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low GENERAL DESCRIPTION. The ALD1115 is a monolithic complementary N- channel and P-channel transistor pair intended for a broad range of analog The MDmesh is a new revolutionary Power. MOSFET technology that associates the multiple drain process with the companys PowerMESH horizontal Aug 10, 2004 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 18. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V.