(5/5) based on 9 customer reviews
Description
The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual CP388X- 2N2920 . NPN - Low Noise Transistor Die. Die Size. 13 x 13 MILS. Die Thickness. 5.9 MILS. Base Bonding Pad Size. 3.9 x 3.9 MILS. Emitter Bonding NOTE: Texas Instruments recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. Contents. 1. Introduction . Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. Section 1 Basic Circuits. Note:Texas Instruments recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. A year ago, one of the loudest
| Part Number | 2N2920 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Arrays |
| Brand | Infineon Technologies AG |
| Description | TRANS 2NPN 60V 0.03A TO-78 |
| Series | - |
| Packaging | Bulk |
| Transistor Type | 2 NPN (Dual) |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Power - Max | 350mW |
| Frequency - Transition | - |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Supplier Device Package | TO-78-6 |
| Image |  |
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