Description
2V7002KT1G . 3000 / Tape & Reel. SOT 23. (Pb Free). *Specific Device Code, Date Code or overbar orientation and/or location may vary depend- ing upon Aug 15, 2012 NVTE4151PT1G. 2N7002LT3G. NTA4151PT1H. NVTJD4158CT1G. 2N7002WT1G. NTGD1100LT1G. NTZD5110NT1G. 2V7002KT1G . Page 1. 2N7002K. Document number: DS30896 Rev. 14 - 2. 1 of 6 www.diodes. com. August 2013. Diodes Incorporated. 2N7002K. NEW PROD. UC. T. Ciss. Typ. (pF). Coss. Typ. (pF). Crss. Typ. (pF). Pac kag e. Typ e. 2V7002KT1G . AEC Qualified. PPAP. Capable. Pb-free. Halide free. Active. N-. Cha nne l with. Sep 27, 2016 Document # : PB21446Z. Issue Date: 27 September 2016. List of Affected Standard Parts: 2V7002KT1G . SBAV199LT3G. SMMUN2238LT1G.
Part Number | 2V7002KT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 320MA SOT-23-3 |
Series | Automotive, AEC-Q101 |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 320mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 24.5pF @ 20V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300mW (Tj) |
Rds On (Max) @ Id, Vgs | 1.6 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
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