(4/5) based on 2 customer reviews
Description
AFT09MS015NT1 . 1. RF Device Data. Freescale Semiconductor, Inc. RF Power LDMOS Transistor. High Ruggedness N--Channel. Enhancement--Mode Lateral 0. CFB. EU RoHS Yes by exemption. AFT09MS015N. X. O. O. O. O. O. 50. 0. CFB . EU RoHS Yes by exemption. AFT09MS015NT1 . X. O. O. O. O. O. 50. 0. CFB. AFT09MS015NT1 . U. 136 941. 16 CW. CW. 12.5. 17.2/941. 77. 1.0. PLD--1.5W. AFT05MS031NR1. U. 136 520. 31 CW. CW. 13.6/12.5. 17.7/520. 71.0. 0.67.
| Part Number | AFT09MS015NT1 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - RF |
| Brand | Infineon Technologies AG |
| Description | FET RF 40V 870MHZ PLD |
| Series | - |
| Packaging | Cut Tape (CT) |
| Transistor Type | LDMOS |
| Frequency | 870MHz |
| Gain | 17.2dB |
| Voltage - Test | 12.5V |
| Current Rating | - |
| Noise Figure | - |
| Current - Test | 100mA |
| Power - Output | 16W |
| Voltage - Rated | 40V |
| Package / Case | PLD-1.5W-2 |
| Supplier Device Package | PLD-1.5W-2 |
| Image |  |
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