(4/5) based on 7 customer reviews
Description
Datasheet The AO3434A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in. 1. AOS Semiconductor. Product Reliability Report. AO3434A , rev B. Plastic Encapsulated Device. ALPHA & OMEGA Semiconductor, Inc www.aosmd.com ALPHA & OMEGA. SEMICONDUCTOR. Document No. PD-01748. Version. A. Title. AO3434A Marking Description. SOT-23 PACKAGE MARKING ALPHA & OMEGA. SEMICONDUCTOR. Document No. ID-00494. Version. B. Title. AO3434 Marking Description. SOT-23 PACKAGE MARKING DESCRIPTION .
| Part Number | AO3434A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 30V 4A SOT23 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 245pF @ 15V |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3L |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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