Description
The AO3460 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the. AO3460 Marking Description. SOT-23 PACKAGE MARKING DESCRIPTION m. PNWA: NOTE: P - Package and product type. N - Last digital of product number. This AOS product reliability report summarizes the qualification result for AO3460 . Accelerated environmental tests are performed on a specific sample size, and
Part Number | AO3460 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 0.65A SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 650mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.4W (Ta) |
Rds On (Max) @ Id, Vgs | 1.7 Ohm @ 650mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3L |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
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AO3460
INFIENON
5000000
0.21
Hongkong Shengshi Electronics Limited
AO3460
Infinen
138237
1.22
Cicotex Electronics (HK) Limited
AO3460
INFLNEON
50000
2.23
Yingxinyuan INT'L (Group) Limited
AO3460
Infineon Technologies A...
12900
3.24
Ande Electronics Co., Limited
AO3460
INFINEON/IR
73155
4.25
N&S Electronic Co., Limited