Part Number | AUIRF7737L2TR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 40V 315A DIRECTFET |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 156A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 134nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5469pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.3W (Ta), 83W (Tc) |
Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 94A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET L6 |
Package / Case | DirectFET,Isometric L6 |
Image |
AUIRF7737L2TR
INFIENON
1088
1.01
HK FEILIDI ELECTRONIC CO., LIMITED
AUIRF7737L2TR
Infinen
1
2.0575
HONGKONG YUETAIJIA ELECTRONIC LIMITED
AUIRF7737L2TR
INFLNEON
16660
3.105
LvangChip(HongKong)Co.,Limited
AUIRF7737L2TR
Infineon Technologies A...
1776
4.1525
Yingxinyuan INT'L (Group) Limited
AUIRF7737L2TR
INFINEON/IR
10000
5.2
ACHIEVE ELECTRONICS CO., LIMITED