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Description
Datasheet Jan 12, 2010 Description. The AUIRF7739L2TR(1) combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced 0. Superior Dual-sided Cooling. Part Number. Package. VDS. RDS(on) typ. RDS( on) max. Qg (typ). AUIRF7739L2 . DF2 L can. 40V. 0.7mOhm. 1.0mOhm. 220nC. AUIRF7739L2 . 40. 1. 270. 220. Large. AUIRF7738L2. 40. 1.6. 209. 147. Large. AUIRF7737L2. 40. 2.2. 167. 104. Large. AUIRF7736M2. 40. 3.1. 141. 83. Medium . AUIRF7739L2 . 40 V. 1 m . 270 A. 220 nC. DirectFET L. AUIRF7736M2. 40 V. 3.1 m . 141 A. 83 nC. DirectFET M. 600V Automotive IGBTs for Switching QG Typ. @ 10Vgs (nC). Pad Outline. Optimized Feature. Package. Small Can. Medium Can. Large Can. 40. 1.0. 270. 220. L8. Low RDS(on). AUIRF7739L2 . 40.
| Part Number | AUIRF7739L2 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 40V 46A DIRECTFET2 |
| Series | HEXFET |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Ta), 270A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 330nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 11880pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 1 mOhm @ 160A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET L8 |
| Package / Case | DirectFET,Isometric L8 |
| Image |  |
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