Description
DATASHEET 07/21/10 www.irf.com. 1. TO-220AB. AUIRFB3207 . AUIRFB3207 . HEXFET Power MOSFET. S. D. G. AUTOMOTIVE GRADE. SD. G. Features l. Advanced TO-220. AUIRFB3207 . Gen 10.2. 4.50. 75. 0.50. 2.00 4.00. 180. Normal. TO- 220. AUIRFP2907Z. Gen 10.2. 4.50. 75. 0.50. 2.00 4.00. 180. Normal. TO-247. AUIRFB3207 . 4.50. 75. 0.50. 2.0 4.0. 180. Normal. Gen 10.2. TO-220. AUIRFP2907Z. 4.50. 75. 0.50. 2.0 4.0. 180. Normal. Gen 10.2. TO-247. AUIRFN7107. AUIRFB3207 . 75. 4.5. 177. 410. AUIRFP2907. 75. 4.5. 170. 180. AUIRF2907Z. AUIRFP2907Z. 75. 5.8. 120. 79. AUIRFS3307Z. AUIRFB3307Z. 75. 7.0. 140. 150. AUIRFB3207 . 4.5. 170 180. AUIRF2907Z. AUIRFP2907Z. PRODUCT CATALOG | AUTOMOTIVE. * Qg at 5VGS. ** Super TO-220 (TO-273AA). Coming in 2013.
Part Number | AUIRFB3207 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 75V 75A TO220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7600pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
AUIRFB3207
INFIENON
1000
1.74
MY Group (Asia) Limited
AUIRFB3207
Infinen
850
2.735
HK HEQING ELECTRONICS LIMITED
AUIRFB3207
INFLNEON
8164
3.73
CIS Ltd (CHECK IC SOLUTION LIMITED)
AUIRFB3207
Infineon Technologies A...
8315
4.725
ATLANTIC TECHNOLOGY LIMITED
AUIRFB3207
INFINEON/IR
29864
5.72
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED