Description
DATASHEET AUIRFB8409 . AUIRFS8409. D2-Pak. Tube. 50. AUIRFS8409. AUIRFS8409. D2- Pak. Tape and Reel Left. 800. AUIRFS8409TRL. AUIRFSL8409. TO-262. Tube. 300.00. Normal. TO-262. IPB180N04S4-01. OptiMOS -T2. 1.30. 180. 0.80. 2.00 4.00. 135.00. Normal. TO263-7-3 (TO220-7 (SMD)). AUIRFB8409 . Gen 12.7. 2.2 3.9. 300. Normal. Gen 12.7. TO-262. IPB180N04S4-01. 1.30. 180. 0.80. 2.0 4.0. 135. Normal. OptiMOS -T2. TO263-7. AUIRFB8409 . 1.30. 195. 0.40. AUIRF8409WL. 1.25. 400 160. AUIRFS3004-7P. 1.3. 240 150. AUIRFS8407-7P. 1.3. 195 305. AUIRFB8409 . 1.4. 1.7. 380. 120. AUIRLS3034-7P. AUIRF3004WL.
Part Number | AUIRFB8409 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 40V 195A TO220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 450nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 14240pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
AUIRFB8409
INFIENON
30000
0.6
Shenzhen Senli Technology Co., Ltd
AUIRFB8409
Infinen
820
1.6475
Hk Yilifa Electronic Technology Limited
AUIRFB8409
INFLNEON
10000
2.695
Shenzhen Qiangneng Electronics Co., Ltd.
AUIRFB8409
Infineon Technologies A...
100
3.7425
Redstar Electronic Limited
AUIRFB8409
INFINEON/IR
1960
4.79
Yingxinyuan INT'L (Group) Limited