Description
Oct 29, 2015 AUIRLL2705 . VDSS. 55V. RDS(on) max. 0.04 . ID. 3.8A. Description. Specifically designed for Automotive applications, this cellular design of AUIRLL2705 . Gen 5. 40.00. 5. 120.00. 1.00 3.00. 32.00. Logic. SOT-223. AUIRF7341Q. Gen 5. 2 x 50.00. 5.1. 20.00. 1.00 3.00. 29.00. Logic. SO-8 (DSO -8). AUIRLL2705 . 55. 40.0. 19. 23. AUIRFIZ34N. 55. 40.0. 26. 23. AUIRFZ34N. 55. 45.0. 25. 23. AUIRFR4105. 55. 58.0. 100.0. 16. 7*. AUIRLR024Z. 55. 65.0. 100.0. 23.00. Normal. Gen 5. TO-220 FullPak. AUIRFZ34N. 40.00. 29.00. 2.20. 2.00 4.00. 23.00. Normal. Gen 5. TO-220. AUIRLL2705 . 40.00. 5.00. 120.00. 1.00
Part Number | AUIRLL2705 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 5.2A SOT223 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 3.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |
Image |
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