Infineon Technologies AG

Description

Aug 26, 2015 BAS416 . C10. 1 nF. R14. 150 . BD1d. BD1b. BD1a. BD1c. WB2. R3. 1.2 . R8 . 1.2 . R1. 1.2 . R2. 1.2 . C11. 2.2 F. 50 V. BAV70W. Jul 20, 2015 R2. 1.2 . R3. 1.2 . R4. 10 . R5. 10 . D4a. BAS416 . C10. 1 nF. R17. 1 %. 3.3 k . RT1 TTC05. 100 k @ 25 C. 3.8 k @ 110 C. R8. C19. 100nF. U2-1. SFH618A-4. RM10. Lp=650 H. 2SK3569. Q1. 1M. 2. 1M. 2. D4a. BAS416 . C10a. 1nF. BAS21W. D3a. 56k. C12. 220pF. R18. R13a. BYV70W. BASN 125ST* 125/37 125/55 90/55 70/55 2xM50*. 1NO 4,3 1SEH030414R5223 1428841. Plastkapslete sikkerhetsbrytere 4-pol IP65. BAS 416 /1 IP54 16/5,5 (http://www.centralsemi.com), and the BAS416 from Philips. (http://www. semiconductors.philips.com). But the maximum leakage specifications are actually quite