Part Number | BCR108WH6327XTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Infineon Technologies AG |
Description | TRANS PREBIAS NPN 250MW SOT323-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 170MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | PG-SOT323-3 |
Image |
BCR108WH6327XTSA1
INFIENON
7436
1.13
Shenzhen Qiangneng Electronics Co., Ltd.
BCR108WH6327XTSA1
Infinen
1017
2.5825
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BCR108WH6327XTSA1
INFLNEON
2261
4.035
Viassion Technology Co., Limited
BCR108WH6327XTSA1
Infineon Technologies A...
4915
5.4875
Shenzhen Pohonda Electronics Co.,Ltd.
BCR108WH6327XTSA1
INFINEON/IR
1929
6.94
MY Group (Asia) Limited