Part Number | BCR119E6327HTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Infineon Technologies AG |
Description | TRANS PREBIAS NPN 200MW SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 150MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | PG-SOT23-3 |
Image |
BCR119E6327HTSA1
INFIENON
9000
0.21
ASIAWAY (H.K.) LIMITED
BCR119E6327HTSA1
Infinen
8000
0.66
MY Group (Asia) Limited
BCR119E6327HTSA1
INFLNEON
6200
1.11
Dedicate Electronics (HK) Limited
BCR119S
Infineon Technologies A...
2480
1.56
H.T. Electronics Industrial Co., Limited
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INFINEON/IR
339260
2.01
Yingxinyuan INT'L (Group) Limited