Part Number | BCR119WE6327HTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Infineon Technologies AG |
Description | TRANS PREBIAS NPN 250MW SOT323-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 150MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | PG-SOT323-3 |
Image |
BCR119WE6327HTSA1
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1.58
Dedicate Electronics (HK) Limited
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H.T. Electronics Industrial Co., Limited
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Infineon Technologies A...
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Hong Kong Capital Industrial Co.,Ltd