Description
Page 1. 2011-08-19. 1. BCR133 NPN Silicon Digital Transistor. Switching in circuit, inverter, interface circuit, drive circuit. Built in bias resistor (R1 = 10 k , BCR133. 3k* SP000010757. BCR133E6327HTSA1 . SOT23. 50. 20. 100. 200. 10 . 10. BCR133. 10k* SP000010759. BCR133E6433HTMA1. SOT23. 50. 20. 100.
Part Number | BCR133E6327HTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Infineon Technologies AG |
Description | TRANS PREBIAS NPN 200MW SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 130MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | PG-SOT23-3 |
Image |
BCR133E6327HTSA1
INFIENON
50000
1.05
Shenzhen Qiangneng Electronics Co., Ltd.
BCR133E6327HTSA1
Infinen
285
1.7
Beijing jingbei Components Co.,Ltd
BCR133E6327HTSA1
INFLNEON
30000
2.35
E-Core Electronics Co.
BCR133E6327HTSA1
Infineon Technologies A...
20000
3
S.E. Components
BCR133E6327HTSA1
INFINEON/IR
35200
3.65
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED