Part Number | BCR148WE6327BTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Infineon Technologies AG |
Description | TRANS PREBIAS NPN 250MW SOT323-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 100MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | PG-SOT323-3 |
Image |
BCR148WE6327BTSA1
INFIENON
3865
0.32
MY Group (Asia) Limited
BCR148WE6327BTSA1
Infinen
6623
1.345
Dedicate Electronics (HK) Limited
BCR 148 E6327*
INFLNEON
759
2.37
Ramos S.R.L.
BCR148S E6327
Infineon Technologies A...
3080
3.395
Altitek Electronics Inc.
BCR148
INFINEON/IR
6662
4.42
Yingxinyuan INT'L (Group) Limited