Part Number | BCR192E6327HTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Infineon Technologies AG |
Description | TRANS PREBIAS PNP 200MW SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | PG-SOT23-3 |
Image |
BCR192E6327HTSA1
INFIENON
2229
0.23
MY Group (Asia) Limited
BCR192E6327HTSA1
Infinen
1786
1.0275
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BCR192E6327HTSA1
INFLNEON
4906
1.825
Shenzhen Qiangneng Electronics Co., Ltd.
BCR192E6327HTSA1
Infineon Technologies A...
1933
2.6225
Ysx Tech Co., Limited
BCR192E6327HTSA1
INFINEON/IR
5927
3.42
Yataitong Electronic Technology Co., Limited