Part Number | BCR198WE6327BTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Infineon Technologies AG |
Description | TRANS PREBIAS PNP 250MW SOT323-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 190MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | PG-SOT323-3 |
Image |
BCR198WE6327BTSA1
INFIENON
4166
1.4
MY Group (Asia) Limited
BCR198WE6327BTSA1
Infinen
3712
2.225
Dedicate Electronics (HK) Limited
BCR 198F E6327
INFLNEON
5626
3.05
MY Group (Asia) Limited
BCR198
Infineon Technologies A...
9981
3.875
Yingxinyuan INT'L (Group) Limited
BCR198FE6327
INFINEON/IR
656
4.7
HK TWO L ELECTRONIC LIMITED