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Description
The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for Sep 1, 1993 BDW93A. BDW93B. BDW93C . VCBO. 45. 60. 80. 100. V. Collector-emitter voltage (IB = 0). BDW93. BDW93A. BDW93B. BDW93C . VCEO. 45. Characteristic Symbol BDW93 BDW93A BDweaB BDW93C Unit. BDW94 BDW94A BDW94B BDW94C. Collector-Emitter Voltage VcEo 45 60 80 100 V. 1993 9 1 BDW93, BDW93A, BDW93B and BDW93C . 80 W at 25 C Case Temperature. 12 A Continuous Collector Current. Minimum hFE of 750 at 3 . NPN DARLINGTON TRANSISTOR. HBDW93C. . BDW93C . . .
| Part Number | BDW93C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Infineon Technologies AG |
| Description | TRANS NPN DARL 100V 12A TO-220 |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 12A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 5A, 3V |
| Power - Max | 80W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Image |  |
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