Part Number | BFP640FESDH6327XTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Infineon Technologies AG |
Description | TRANS RF NPN 4.5V 50MA 4TSFP |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 4.7V |
Frequency - Transition | 46GHz |
Noise Figure (dB Typ @ f) | 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz |
Gain | 8B ~ 30.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA, 3V |
Current - Collector (Ic) (Max) | 50mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 4-SMD, Flat Leads |
Supplier Device Package | 4-TSFP |
Image |
BFP640FESDH6327XTSA1
INFIENON
8693
0.02
Shenzhen Qiangneng Electronics Co., Ltd.
BFP640FESDH6327XTSA1
Infinen
2506
1.1975
Shenzhen Yuding Technology Co., Ltd
BFP640FESDH6327XTSA1
INFLNEON
1819
2.375
HONGKONG SINIKO ELECTRONIC LIMITED
BFP640FESDH6327XTSA1
Infineon Technologies A...
4076
3.5525
MY Group (Asia) Limited
BFP640FESDH6327XTSA1
INFINEON/IR
1045
4.73
Yataitong Electronic Technology Co., Limited