Part Number | BFR840L3RHESDE6327XTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Infineon Technologies AG |
Description | TRANS RF BIPO NPN 35MA TSLP-3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 2.6V |
Frequency - Transition | 75GHz |
Noise Figure (dB Typ @ f) | 0.5dB @ 450MHz |
Gain | 27dB |
Power - Max | 75mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10mA, 1.8V |
Current - Collector (Ic) (Max) | 35mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | TSLP-3-9 |
Image |
BFR840L3RHESDE6327XTSA1
INFIENON
60000
0.28
Shenzhen Qiangneng Electronics Co., Ltd.
BFR840L3RHESDE6327XTSA1
Infinen
8505
1.0625
Honestwin Technology Co., Limited
BFR840L3RHESDE6327XTSA1
INFLNEON
7585
1.845
Viassion Technology Co., Limited
BFR840L3RHESDE6327XTSA1
Infineon Technologies A...
3000
2.6275
HONGKONG SINIKO ELECTRONIC LIMITED
BFR840L3RHESDE6327XTSA1
INFINEON/IR
55300
3.41
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED