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Description
Jan 13, 2014 Page 1. 1. Product profile. 1.1 General description. NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin Page 1. Philips Semiconductors mm. 900 MHz low noise amplifier t m = demoboard Application report. - -mm-. 9 00 MHz LOW NOISE AMPLIFIER Jun 30, 2015 Standard end- of-life. Multiple. 31-dec-2015. 30-jun-2016 BFU530AR . 934067698215. BFU530A. RF Transistor. BFM520,115. 934041410115. Dec 31, 2014 31-Dec-2015 BFU530AR . 934067698215. BFU530A. RF Transistor. BFR92A, 215. 933551560215. BFR92A. NPN 5 GHz wideband transistor.
| Part Number | BFU530AR |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - RF |
| Brand | Infineon Technologies AG |
| Description | TRANS RF NPN 12V 40MA TO-236AB |
| Series | Automotive, AEC-Q101 |
| Packaging | Cut Tape (CT) |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 11GHz |
| Noise Figure (dB Typ @ f) | 0.6dB @ 900MHz |
| Gain | 18dB |
| Power - Max | 450mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 8V |
| Current - Collector (Ic) (Max) | 40mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TO-236AB (SOT23) |
| Image |  |
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