(5/5) based on 18 customer reviews
Description
Feb 12, 2013 BSB013NE2LXI . OptiMOSTM. Power-MOSFET. Features. Optimized SyncFET for high performance Buck converter. Integrated monolithic BSB013NE2LXI . Issued. 19. November 2015. MA#. MA000887544. Package. MG -WDSON-2-8. Weight*. 83.36 mg. Construction Element. Material Group. BSB013NE2LXI . 1.3m . P-channel. BSB027P03LX3 G. 2.7m . BSB029P03NX3 G. 2.9m . CanPAK S. N-channel. BSF030NE2LQ. 3.0m . BSF024N03LT3 G. Oct 3, 2011 Double sided cooling via metal backplate. Source down concept reduces source inductance to ~0 nH for maximized efficiency. Footprint BSB013NE2LXI . SP000756346. BSB013NE2LXIXUMA1. CanPAK M-size. 25. 1.3. 1.2 2.0. 163. BSC009NE2LS. SP000893362. BSC009NE2LSATMA1.
| Part Number | BSB013NE2LXI |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 25V 163A WDSON-2 |
| Series | OptiMOS |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 163A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 12V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 30A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | MG-WDSON-2, CanPAK M |
| Package / Case | 3-WDSON |
| Image |  |
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