Part Number | BSB056N10NN3GXUMA1 MARKING:0110 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 9A WDSON-2 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 83A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5500pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 30A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | MG-WDSON-2, CanPAK M |
Package / Case | 3-WDSON |
Image |
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