Part Number | BSB280N15NZ3GXUMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 150V 9A WDSON-2 |
Series | OptiMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 60µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 75V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 30A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | MG-WDSON-2, CanPAK M |
Package / Case | 3-WDSON |
Image |
BSB280N15NZ3GXUMA1
INFIENON
3000
1.77
HONGKONG SINIKO ELECTRONIC LIMITED
BSB280N15NZ3GXUMA1
Infinen
5527
3.3075
Dedicate Electronics (HK) Limited
BSB280N15NZ3GXUMA1
INFLNEON
20000
4.845
SZS QLG Technology Co., Ltd
BSB280N15NZ3GXUMA1
Infineon Technologies A...
1000
6.3825
MY Group (Asia) Limited
BSB280N15NZ3GXUMA1
INFINEON/IR
21000
7.92
N&S Electronic Co., Limited