Description
DATASHEET Feb 12, 2013 BSC010NE2LS . OptiMOSTM. Power-MOSFET. Features. Optimized for high performance Buck converter. Very low on-resistance R DS(on) Tpackage_MAX = 90 C. CanPAK . BSB009N03LS. VOUT = 12V. IOUT = 20A continuous. Tpackage_MAX = 70 C. SuperSO8. BSC010NE2LS . VOUT = 12V. GL = 2 x BSC010NE2LS . VOUT = 3.3V. VOUT = 1.0V. VOUT = 1.5V. VOUT = 1.2 V. VOUT = 1.8V. VOUT = 2.5V. fSW = 400kHz. July 13, 2012. FN7832.1 of a Power-MOSFET (OptiMOS 25V, BSC010NE2LS [1]). The blue s . an Infineon power MOSFET ( BSC010NE2LS ) is shown. The five line (blue line), the Oct 20, 2014 MOSFETs (Manufacturer PN: BSC010NE2LS ) are connected in parallel across VOUT and PGND next to the remote voltage sensing location
Part Number | BSC010NE2LS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 25V 39A TDSON-8 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4700pF @ 12V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
Rds On (Max) @ Id, Vgs | 1 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
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