Part Number | BSC016N03LSGATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 100A TDSON8 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 131nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10000pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSC016N03LSGATMA1
INFIENON
2688
1.69
Shenzhen Hongying Micro Technology Co., Ltd
BSC016N03LSGATMA1
Infinen
20457
3.0575
Useta Tech (HK) Limited
BSC016N03LSGATMA1
INFLNEON
12000
4.425
MeiChuangXinKe (SZ) Electronics Co., Ltd.
BSC016N03LSGATMA1
Infineon Technologies A...
1000
5.7925
STH Electronics Co.,Ltd
BSC016N03LSGATMA1
INFINEON/IR
35800
7.16
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED