Description
Q2, Q4. 2. Transistor, NFET, 30 V, RDS(on) < 20 m ,. BSC057N03LSG## or Infineon. TDSON-8. BSC050N03LSG or. BSC042N03LSG or. BSC022N03SG or. BSC022N03SG . MOSFET, N-CH, PowerPAK, INFINEON. 30V, 50A. QE5. SI2301. MOSFET, P-CH, SOT-23, VISHAY. QE6. SI2301. MOSFET, P-CH, SOT-23,
Part Number | BSC022N03SG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 100A TDSON-8 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 110µA |
Gate Charge (Qg) (Max) @ Vgs | 64nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 8290pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSC022N03SG
INFIENON
35800
0.82
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BSC022N03SG
Infinen
5000
1.575
Belt (HK) Electronics Co
BSC022N03SG
INFLNEON
1000
2.33
STH Electronics Co.,Ltd
BSC022N03SG
Infineon Technologies A...
1000
3.085
Yingxinyuan INT'L (Group) Limited
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INFINEON/IR
97877
3.84
Cicotex Electronics (HK) Limited