Part Number | BSC025N03MSGATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 100A TDSON-8 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 23A (Ta). 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7600pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 83W (Tc) |
Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
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BSC025N03MSGATMA1
INFIENON
2666
0.59
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BSC025N03MSGATMA1
Infinen
319
1.9325
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
BSC025N03MSGATMA1
INFLNEON
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HONGKONG SINIKO ELECTRONIC LIMITED
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Infineon Technologies A...
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Agreat Technology (Hong Kong) Co., Limited
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INFINEON/IR
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ENSPIRE TECHNOLOGY (HONG KONG) CO., LIMITED