Part Number | BSC032NE2LSATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 25V 22A TDSON-8 |
Series | OptiMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 84A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 12V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSC032NE2LSATMA1
INFIENON
3171
1.41
Finestock Electronics HK Limited
BSC032NE2LSATMA1
Infinen
662
1.905
Hongkong Shengshi Electronics Limited
BSC032NE2LSATMA1
INFLNEON
3173
2.4
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BSC032NE2LSATMA1
Infineon Technologies A...
2644
2.895
RX ELECTRONICS LIMITED
BSC032NE2LSATMA1
INFINEON/IR
7350
3.39
MY Group (Asia) Limited