Description
Nov 23, 2015 DATE. APPROVED. ECO. REV. KAUNG H. PRODUCTION. 1. 2. 11-19-2015. Q3. BSC035N10NS5ATMA1 . Q3. BSC035N10NS5ATMA1 . 6. 4. 5. 3-Phase Ideal Diode Bridge,10 C Temperature Rise. Infineon BSC035N10NS5ATMA1 . Bottom Side. Figure 1. Conditions: 24VAC RMS (L-N), 5A Load Current,
Part Number | BSC035N10NS5ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 100A TDSON-8 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 115µA |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6500pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 156W (Tc) |
Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
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