Part Number | BSC042NE7NS3GATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 75V 100A TDSON-8 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.8V @ 91µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 37.5V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSC042NE7NS3GATMA1
INFIENON
2688
0.53
Shenzhen Hongying Micro Technology Co., Ltd
BSC042NE7NS3GATMA1
Infinen
20102
1.4775
Useta Tech (HK) Limited
BSC042NE7NS3GATMA1
INFLNEON
3000
2.425
HONGKONG SINIKO ELECTRONIC LIMITED
BSC042NE7NS3GATMA1
Infineon Technologies A...
59670
3.3725
ShenZhen QiaFeng Electronics Co.,Ltd
BSC042NE7NS3GATMA1
INFINEON/IR
5000000
4.32
Hongkong Shengshi Electronics Limited