Part Number | BSC066N06NSATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 64A 8TDSON |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.3V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 46W (Tc) |
Rds On (Max) @ Id, Vgs | 6.6 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSC066N06NSATMA1
INFIENON
1617
0.49
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BSC066N06NSATMA1
Infinen
7800
1.5625
Hongkong Shengshi Electronics Limited
BSC066N06NSATMA1
INFLNEON
4036
2.635
E-Core Electronics Co.
BSC066N06NSATMA1
Infineon Technologies A...
2531
3.7075
Hongkong Yunling Electronics Co.,Limited
BSC066N06NSATMA1
INFINEON/IR
265
4.78
Honestwin Technology Co., Limited