(4/5) based on 14 customer reviews
Description
Feb 13, 2013 BSC0904NSI . OptiMOSTM. Power-MOSFET. Features. Optimized SyncFET for high performance buck converter. Integrated monolithic 1. 2. 3. Material Content Data Sheet. Sales Product Name. BSC0904NSI . Issued. 28. July 2015. MA#. MA001015226. Package. PG-TDSON-8-6. Weight*. Oct 2, 2012 M1: RENESAS RJK0652DPB 60Vds. M2: RENESAS RJK0651DPB 60Vds. M3, M4: INFINEON BSC0904NSI 30Vds. M5: NXP NX7002AK. LT 3791-1 1 98.5% . 4 DC/DC Oct 3, 2012 M1: RENESAS RJK0652DPB 60Vds. M2: RENESAS RJK0651DPB 60Vds. M3, M4: INFINEON BSC0904NSI 30Vds. M5: NXP NX7002AK.
| Part Number | BSC0904NSI |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 30V 20A 8TDSON |
| Series | OptiMOS |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 78A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 37W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
| Image |  |
Hot Offer
BSC0904NSI
INFINEON/IR
1100
6.24
Shenzhen Ke Jin Tai Electronic Co., LTD.
BSC0904NSI
INFIENON
16000
1.6
Finestock Electronics HK Limited
BSC0904NSI
Infinen
19252
2.76
HK HEQING ELECTRONICS LIMITED
BSC0904NSI
INFLNEON
180
3.92
SUNTOP SEMICONDUCTOR CO., LIMITED
BSC0904NSI IC
Infineon Technologies A...
5500
5.08
CIS Ltd (CHECK IC SOLUTION LIMITED)
