Part Number | BSC110N06NS3GATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 50A TDSON-8 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 23µA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSC110N06NS3GATMA1
INFIENON
18976
0.87
Useta Tech (HK) Limited
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Infinen
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HK HEQING ELECTRONICS LIMITED
BSC110N06NS3GATMA1
INFLNEON
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Hongkong Shengshi Electronics Limited
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Infineon Technologies A...
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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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