Part Number | BSC120N03LSGATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 39A TDSON-8 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSC120N03LSGATMA1
INFIENON
1928
0.73
Shenzhen Hongying Micro Technology Co., Ltd
BSC120N03LSGATMA1
Infinen
6093
1.5375
Useta Tech (HK) Limited
BSC120N03LSGATMA1
INFLNEON
1576
2.345
Hongkong Shengshi Electronics Limited
BSC120N03LSGATMA1
Infineon Technologies A...
2950
3.1525
STH Electronics Co.,Ltd
BSC120N03LSGATMA1
INFINEON/IR
9992
3.96
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED