Part Number | BSC12DN20NS3 G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 11.3A 8TDSON |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 11.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 5.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSC12DN20NS3 G
INFIENON
5000
0.81
Shenzhen Qiangneng Electronics Co., Ltd.
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Infinen
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UCAN TRADE (HK) LIMITED
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INFLNEON
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Finestock Electronics HK Limited
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Infineon Technologies A...
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100
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