Part Number | BSC360N15NS3GATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 150V 33A 8TDSON |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
Vgs(th) (Max) @ Id | 4V @ 45µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 75V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 74W (Tc) |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSC360N15NS3GATMA1
INFIENON
20893
1.14
Useta Tech (HK) Limited
BSC360N15NS3GATMA1
Infinen
5000000
2.1475
Hongkong Shengshi Electronics Limited
BSC360N15NS3GATMA1
INFLNEON
35800
3.155
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BSC360N15NS3GATMA1
Infineon Technologies A...
1000
4.1625
STH Electronics Co.,Ltd
BSC360N15NS3GATMA1
INFINEON/IR
99194
5.17
Hlinsemi Electronics (HongKong) Co., Limited