Description
Datasheet 1. Oct-27-1997. BSM 50 GB 170 DN2. IGBT Power Module. Half-bridge. Including fast free-wheeling diodes. Package with insulated metal base plate. R. Figure 7 shows the problem of heatsink earthing in an other operating point (VCE = 450 V,. ICE = 5 A, fp = 5 kHz). BSM50GB120DN2 , OP 450V / 20A / 5kHz. 20. Standard 2. Generation. BSM25GB120DN2. 1200. 25. 2,5. 200. 0,6. M_34a/97. BSM35GB120DN2. 1200. 35. 2,7. 280. 0,44 M_34a/97. BSM50GB120DN2 . 1200 .
Part Number | BSM50GB120DN2 |
Brand | Infineon Technologies AG |
Image |
Hot Offer
BSM50GB120DN2
INFIENON
1100
0.35
ALLCHIPS ELECTRONICS LIMITED
BSM50GB120DN2
Infinen
200
1.18
NEW KRING ELECTRONICS CO.,LIMITED
BSM50GB120DN2
INFLNEON
4060
2.01
N&S Electronic Co., Limited
BSM50GB120DN2
Infineon Technologies A...
6500
2.84
SAIPU ELECTRONICS(HK) TECHNOLOGY LIMITED
BSM50GB120DN2
INFINEON/IR
69
3.67
NEW KRING ELECTRONICS CO.,LIMITED