(5/5) based on 2 customer reviews
Description
MOSFET N/P-CH 60V 3.1A/2A 8SOIC Series: SIPMOS? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25～C: 3.1A, 2A Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2V @ 20米A Gate Charge (Qg) @ Vgs: 22.5nC @ 10V Input Capacitance (Ciss) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: PG-DSO-8
| Part Number | BSO615C G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Infineon Technologies AG |
| Description | MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
| Series | SIPMOS |
| Packaging | Cut Tape (CT) |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | PG-DSO-8 |
| Image |  |
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