Part Number | BSP149L6327HTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 660MA SOT-223 |
Series | SIPMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 25V |
Vgs (Max) | - |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 660mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Image |
BSP149L6327HTSA1
INFIENON
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MY Group (Asia) Limited
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