Part Number | BSP295E6327 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 1.8A SOT223 |
Series | SIPMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.8V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 368pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 1.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Image |
BSP295E6327
INFIENON
7500
0.81
SAIPU ELECTRONICS(HK) TECHNOLOGY LIMITED
BSP295E6327
Infinen
28000
1.56
Yingxinyuan INT'L (Group) Limited
BSP295E6327
INFLNEON
16000
2.31
Finestock Electronics HK Limited
BSP295E6327
Infineon Technologies A...
100
3.06
RX ELECTRONICS LIMITED
BSP295E6327
INFINEON/IR
355
3.81
LYT (HONGKONG) CO., LIMITED