Part Number | BSP296L6327HTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 1.1A SOT-223 |
Series | SIPMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.8V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 364pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.79W (Ta) |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 1.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Image |
BSP296L6327HTSA1
INFIENON
1000
1.52
MY Group (Asia) Limited
BSP296L6327HTSA1
Infinen
16000
2.12
Finestock Electronics HK Limited
BSP296L6327HTSA1
INFLNEON
18650
2.72
Fairstock HK Limited
BSP296
Infineon Technologies A...
50000
3.32
Yingxinyuan INT'L (Group) Limited
BSP296E6327
INFINEON/IR
122
3.92
HK TWO L ELECTRONIC LIMITED