(5/5) based on 13 customer reviews
Description
powered by HKIN - Datasheet (Result Page) About 1 results (0.39 seconds) Web (1) BSP297 SIPMOS Small-Signal-Transistor BSP297 SIPMOS Small-Signal-Transistor Nov 29, 2012 Page 1. BSP297. Rev. 2.2. SIPMOS Small-Signal-Transistor. Product Summary. VDS. 200. V. RDS(on). 1.8. W. ID. 0.66. A. Feature. clipped from Google - 6/2017 1 powered by Custom Search HKIPortal_resize(); HKIPortal_attachEvent(window, load, HKIPortal_resize); HKIPortal_attachEvent(window, load, HKIPortal_onLoad); reviews - - cal - Price range: Availability: . Price: . - - = tn.height * 7 / 5 data-attr={src:tn.src}>
| Part Number | BSP297H6327XTSA1 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 200V 660MA SOT-223 |
| Series | SIPMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.1nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 357pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 660mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Image |  |
BSP297H6327XTSA1
INFIENON
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1.78
Useta Tech (HK) Limited
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5000000
2.7475
Hongkong Shengshi Electronics Limited
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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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Infineon Technologies A...
1000
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STH Electronics Co.,Ltd
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1000
5.65
HK FEILIDI ELECTRONIC CO., LIMITED
