Part Number | BSP300H6327XUSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 800V 190MA SOT-223 |
Series | SIPMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 20 Ohm @ 190mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Image |
BSP300H6327XUSA1
INFIENON
1174
0.45
Shenzhen guangyuan tengda technology co., LTD
BSP300H6327XUSA1
Infinen
6343
1.445
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BSP300H6327XUSA1
INFLNEON
6859
2.44
MY Group (Asia) Limited
BSP300H6327XUSA1
Infineon Technologies A...
8604
3.435
STH Electronics Co.,Ltd
BSP300H6327XUSA1
INFINEON/IR
7727
4.43
TERNARY UNION CO., LIMITED