Part Number | BSP316PE6327T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 100V 0.68A SOT223 |
Series | SIPMOS |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 680mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 170µA |
Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 146pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 680mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Image |
BSP316PE6327T
INFIENON
1000
0.73
MY Group (Asia) Limited
BSP316PE6327T
Infinen
16000
1.6375
Finestock Electronics HK Limited
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INFLNEON
18650
2.545
Fairstock HK Limited
BSP316PE6327T
Infineon Technologies A...
5005
3.4525
Dedicate Electronics (HK) Limited
BSP316
INFINEON/IR
1
4.36
Yingxinyuan INT'L (Group) Limited