Part Number | BSP316PL6327HTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 100V 0.68A SOT-223 |
Series | SIPMOS |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 680mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 170µA |
Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 146pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 680mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Image |
BSP316PL6327HTSA1
INFIENON
1000
0.25
MY Group (Asia) Limited
BSP316PL6327HTSA1
Infinen
7069
1.1325
RX ELECTRONICS LIMITED
BSP316PL6327HTSA1
INFLNEON
18650
2.015
Fairstock HK Limited
BSP316P
Infineon Technologies A...
12362
2.8975
RX ELECTRONICS LIMITED
BSP316
INFINEON/IR
1
3.78
Yingxinyuan INT'L (Group) Limited