Part Number | BSP613PH6327XTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 60V 2.9A SOT-223 |
Series | SIPMOS |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 875pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 2.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Image |
BSP613PH6327XTSA1
INFIENON
9251
1.18
SUNTOP SEMICONDUCTOR CO., LIMITED
BSP613PH6327XTSA1
Infinen
7639
1.9775
Hongkong Yunling Electronics Co.,Limited
BSP613PH6327XTSA1
INFLNEON
5602
2.775
RX ELECTRONICS LIMITED
BSP613PH6327XTSA1
Infineon Technologies A...
4486
3.5725
HongKong Trusang Technology Co.,Ltd
BSP613PH6327XTSA1
INFINEON/IR
4146
4.37
WIN AND WIN ELECTRONICS LIMITED